物理学科Seminar第565讲 Strong correlation and topology in 2D semiconductor moiré superlattices

创建时间:  2021/11/01  龚惠英   浏览次数:   返回

报告题目 (Title):Strong correlation and topology in 2D semiconductor moiré superlattices

报告人 (Speaker):李听昕 副教授(上海交通大学)

报告时间 (Time):2021年11月3日(周三) 15:00

报告地点 (Place):校本部E106

邀请人(Inviter):陈阳阳

主办部门:理学院物理系

报告摘要:

Moiré superlattices formed in van der Waals materials have emerged as a new platform to explore strong correlation physics and topological physics in two-dimensional (2D) electronic systems. In this talk, I will mainly present electronic transport and compressibility studies of moiré superlattices built on 2D transition metal dichalcogenide (TMDc) semiconductors. A series of correlation-driven states, including Mott insulators [1], generalized Wigner crystals [2], and stripe phases [3], formed at either integer or fractional filling factors of the moiré superlattice. Benefiting from the extraordinary tunability of the system, an interaction-driven Mott transition has been realized experimentally [4]. Furthermore, we found the band topology also plays an important role in TMDc moiré superlattice, which enable us to realize a quantum anomalous Hall state in TMDc moiré superlattice [5]. Our studies pave the path for discovery of a wealth of emergent phenomena arising from the combined influence of strong correlation and topology in TMDc moiré superlattice.

上一条:数学系Seminar第2169讲 Change Point Detection

下一条:今日化学系列报告第271讲 Open the Editor’s Black-box and Wiley Chemistry Partner Journal Opportunities


物理学科Seminar第565讲 Strong correlation and topology in 2D semiconductor moiré superlattices

创建时间:  2021/11/01  龚惠英   浏览次数:   返回

报告题目 (Title):Strong correlation and topology in 2D semiconductor moiré superlattices

报告人 (Speaker):李听昕 副教授(上海交通大学)

报告时间 (Time):2021年11月3日(周三) 15:00

报告地点 (Place):校本部E106

邀请人(Inviter):陈阳阳

主办部门:理学院物理系

报告摘要:

Moiré superlattices formed in van der Waals materials have emerged as a new platform to explore strong correlation physics and topological physics in two-dimensional (2D) electronic systems. In this talk, I will mainly present electronic transport and compressibility studies of moiré superlattices built on 2D transition metal dichalcogenide (TMDc) semiconductors. A series of correlation-driven states, including Mott insulators [1], generalized Wigner crystals [2], and stripe phases [3], formed at either integer or fractional filling factors of the moiré superlattice. Benefiting from the extraordinary tunability of the system, an interaction-driven Mott transition has been realized experimentally [4]. Furthermore, we found the band topology also plays an important role in TMDc moiré superlattice, which enable us to realize a quantum anomalous Hall state in TMDc moiré superlattice [5]. Our studies pave the path for discovery of a wealth of emergent phenomena arising from the combined influence of strong correlation and topology in TMDc moiré superlattice.

上一条:数学系Seminar第2169讲 Change Point Detection

下一条:今日化学系列报告第271讲 Open the Editor’s Black-box and Wiley Chemistry Partner Journal Opportunities