报告题目 (Title)：Tuning Carrier Mobility and Interface Properties for High-Performance 2D Electronics（高性能二维电子的载流子及界面性质调控）
报告人 (Speaker)：Ming Yang 教授（香港理工大学）
报告时间 (Time)：2023年4月10日 (周一) 10:30-12:30
报告地点 (Place)：校本部E408
邀请人 (Inviter)：尹鑫茂 教授
主办部门：理学院物理系
报告摘要：
Two-dimensional (2D) semiconductors such as molybdenum disulfide (MoS2) could potentially replace silicon in future electronic devices. However, the low carrier mobility in the 2D MoS2 at room temperature and its inferior interface with high-k dielectrics, remain critical challenges for high-performance nanoelectronics. In this talk, we show that by introducing rippled lattice structure in 2D MoS2, a record-high carrier mobility can be achieved at room temperature, due to the increased intrinsic dielectric constant and much suppressed phonon scattering. For the interface between conventional high-k dielectrics and 2D MoS2, we find that hydrogenation is a desired approach to passivate the dangling bonds and improve the interface properties, in which the hydrogenation can selectively occur at high-k dielectrics such as Si3N4 and HfO2, and do not affect the 2D semiconductor MoS2. Finally, we report a data-driven approach to accelerate the development of various promising inorganic molecular crystals as the high-performance high-k dielectrics for 2D MoS2 based electronic devices. These results deepen the understanding of the carrier mobility in 2D semiconductors and their interface with high-k dielectrics, and could be useful for developing a broad range of high-performance 2D electronic and optoelectronic devices.
References:
1. Hong Kuan Ng, Du Xiang, Ady Suwardi, Guangwei Hu, Ke Yang, Yunshan Zhao, Tao Liu, Zhonghan Cao, Huajun Liu, Shisheng Li, Jing Cao, Qiang Zhu, Zhaogang Dong, Chee Kiang Ivan Tan, Dongzhi Chi, Cheng-Wei Qiu, Kedar Hippalgaonkar, Goki Eda, Ming Yang*, Jing Wu*, Improving carrier mobility in two-dimensional semiconductors with rippled materials, Nature Electronics 5, 489–496 (2022).
2. Yulin Yang, Tong Yang, Tingting Song, Jun Zhou, Jianwei Chai, Lai Mun Wong, Hongyi Zhang, Wenzhang Zhu, Shijie Wang, Ming Yang, Selective hydrogenation improves interface properties of high-k dielectrics on 2D semiconductors, Nano Research 15, 4646–4652 (2022).
