物理学科Seminar第598讲 在三维R2Ir3Si5 (R = Lu, Er, Ho) 体系中存在的庞电荷密度波一级相变以及它和磁性的相互作用

创建时间:  2022/12/12  龚惠英   浏览次数:   返回

报告题目 (Title):A colossal first-order charge density wave transition in 3D R2Ir3Si5 (R = Lu, Er, Ho) and its interplay with magnetism(在三维R2Ir3Si5 (R = Lu, Er, Ho) 体系中存在的庞电荷密度波一级相变以及它和磁性的相互作用)

报告人 (Speaker):Sitaram Ramakrishnan, Assistant Professor(Hiroshima University)

报告时间 (Time):2022年12月20日 (周二) 15:00-17:00

报告地点 (Place):腾讯会议704-121-735(密码1220)

邀请人 (Inviter):鲍金科

主办部门 (Organizer):理学院物理系

报告摘要 (Abstract):

R2Ir3Si5 (R = Lu, Er, Ho) at ambient conditions crystallizes in the orthorhombic Ibam, U2Co3Si5 structure type [1]. Previously, physical property measurements were performed for single-crystal Lu2Ir3Si5 where both charge density wave (CDW) and superconductivity (SC) was found at 200 K and 2 K [2]. However, the symmetry of the crystal in the CDW phase was left unexplored. We have studied both Lu2Ir3Si5 and Er2Ir3Si5 via single crystal x-ray diffraction (SXRD) down to 20 K where we found the structure is actually triclinic I-1 despite the strong monoclinic distortion of the lattice accompanied satellite reflections at q = δ(1 2 1), δ = 0.23 ∼ 0.25 and that the Ir-Ir band is responsible for the CDW [3, 4]. For Er2Ir3Si5 we also found from magnetic susceptibility that the CDW is strongly coupled with the magnetism [4].

Currently, upon investigation of another isostructural compound Ho2Ir3Si5 we find that it follows a similar pattern. All three compounds undergo a first-order CDW transition at 200 K for Lu, 150 K for Er and 110 K for Ho. Although, the CDW does not reside on the R atoms, the TCDW is influenced by it. Here I will present the atomic mechanisms of the CDW and its behavior with magnetism in the R2Ir3Si5 family elucidating the similarities and subtle differences between them.

[1] Y. Singh et al., Phys. Rev. B 71, 045109 (2005).

[2] N. Sangeetha et al., Phys. Rev. B 91, 205131 (2015).

[3] S. Ramakrishnan et al., Phys. Rev. B 104, 054116 (2021).

[4] S. Ramakrishnan et al., Phys. Rev. B 101, 060101(R) (2020).

上一条:数学学科Seminar第2335讲 有限范畴上的层及其应用

下一条:上海大学核心数学研究所——几何与分析综合报告第21讲 RCD(K,N)空间上极弱调和函数的外尔引理


物理学科Seminar第598讲 在三维R2Ir3Si5 (R = Lu, Er, Ho) 体系中存在的庞电荷密度波一级相变以及它和磁性的相互作用

创建时间:  2022/12/12  龚惠英   浏览次数:   返回

报告题目 (Title):A colossal first-order charge density wave transition in 3D R2Ir3Si5 (R = Lu, Er, Ho) and its interplay with magnetism(在三维R2Ir3Si5 (R = Lu, Er, Ho) 体系中存在的庞电荷密度波一级相变以及它和磁性的相互作用)

报告人 (Speaker):Sitaram Ramakrishnan, Assistant Professor(Hiroshima University)

报告时间 (Time):2022年12月20日 (周二) 15:00-17:00

报告地点 (Place):腾讯会议704-121-735(密码1220)

邀请人 (Inviter):鲍金科

主办部门 (Organizer):理学院物理系

报告摘要 (Abstract):

R2Ir3Si5 (R = Lu, Er, Ho) at ambient conditions crystallizes in the orthorhombic Ibam, U2Co3Si5 structure type [1]. Previously, physical property measurements were performed for single-crystal Lu2Ir3Si5 where both charge density wave (CDW) and superconductivity (SC) was found at 200 K and 2 K [2]. However, the symmetry of the crystal in the CDW phase was left unexplored. We have studied both Lu2Ir3Si5 and Er2Ir3Si5 via single crystal x-ray diffraction (SXRD) down to 20 K where we found the structure is actually triclinic I-1 despite the strong monoclinic distortion of the lattice accompanied satellite reflections at q = δ(1 2 1), δ = 0.23 ∼ 0.25 and that the Ir-Ir band is responsible for the CDW [3, 4]. For Er2Ir3Si5 we also found from magnetic susceptibility that the CDW is strongly coupled with the magnetism [4].

Currently, upon investigation of another isostructural compound Ho2Ir3Si5 we find that it follows a similar pattern. All three compounds undergo a first-order CDW transition at 200 K for Lu, 150 K for Er and 110 K for Ho. Although, the CDW does not reside on the R atoms, the TCDW is influenced by it. Here I will present the atomic mechanisms of the CDW and its behavior with magnetism in the R2Ir3Si5 family elucidating the similarities and subtle differences between them.

[1] Y. Singh et al., Phys. Rev. B 71, 045109 (2005).

[2] N. Sangeetha et al., Phys. Rev. B 91, 205131 (2015).

[3] S. Ramakrishnan et al., Phys. Rev. B 104, 054116 (2021).

[4] S. Ramakrishnan et al., Phys. Rev. B 101, 060101(R) (2020).

上一条:数学学科Seminar第2335讲 有限范畴上的层及其应用

下一条:上海大学核心数学研究所——几何与分析综合报告第21讲 RCD(K,N)空间上极弱调和函数的外尔引理